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US Patent Issued to Mitsubishi Electric on Aug. 25 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,816, issued on Aug. 25, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device" was invented by Tatsuo Harada (Tokyo). A... Read More


US Patent Issued to ROHM on Aug. 25 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,817, issued on Aug. 25, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device" was invented by Shusaku Fujie (Kyoto, Japan). ... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Bonding and isolation techniques for stacked transistor structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,818, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Bonding and isolation technique... Read More


US Patent Issued to Intel on Aug. 25 for "Source or drain metallization prior to contact formation in stacked transistors" (Oregon Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,819, issued on Aug. 25, was assigned to Intel Corp. (Santa Clara, Calif.). "Source or drain metallization prior to contact formation in sta... Read More


US Patent Issued to Intel on Aug. 25 for "Partial gate cut structures in an integrated circuit" (Oregon Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,820, issued on Aug. 25, was assigned to Intel Corp. (Santa Clara, Calif.). "Partial gate cut structures in an integrated circuit" was inven... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,821, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and manufactur... Read More


US Patent Issued to BYD SEMICONDUCTOR on Aug. 25 for "Insulated gate bipolar transistor with an electric field stop layer and preparation method thereof, and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,822, issued on Aug. 25, was assigned to BYD SEMICONDUCTOR COMPANY Ltd. (Shenzhen, China). "Insulated gate bipolar transistor with an electr... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Transistor source/drain regions and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,823, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor source/drain regions and... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,824, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More


US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on Aug. 25 for "Electrostatic discharge (ESD) protection device and transistor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,825, issued on Aug. 25, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan). "Electrostatic discharge (ESD) protec... Read More